| PART |
Description |
Maker |
| KMM53616000CK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM
16Mb SYNCBURST?/a> SRAM
16Mb SYNCBURSTSRAM
16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
| HY57V161610D-I HY57V161610DTC-10I HY57V161610DTC-7 |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| DS1270W |
3.3V 16Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
|
| K4S161622H-TC70 K4S161622H-TC60 K4S161622H-TC55 K4 |
16Mb H-die SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| DS2070W-100 DS2070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM
|
MAXIM[Maxim Integrated Products]
|
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| VG3617161DT VG3617161DT-6 VG3617161DT-7 VG3617161D |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| WED2DG472512V5D2 WED2DG472512V7D2 WED2DG472512V65D |
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| HFDOM44MVX HFDOM44MVXXX DOM44MV016 DOM44MV032 DOM4 |
44Pin Disk On Module Min.16MB ~ Max.1.5GB, True IDE Interface Mode, 3.3V / 5.0V Operating
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
